Individual Resume
9/2004-7/2007, studied in Condensed Matter Physics of School of Physical Sciences of Nankai University for doctor's degree
7/2003-9/2013, mainly engaged in the research on molecular beam epitaxy technology and semiconductor film preparation technology as senior engineer
From 9/2013 to now, mainly engaging in the research on scanning microscope technique, micro-nano processing technology and nano photonics
Research direction: Film preparation technology and characterization, micro-nano processing technology and nano photonics technology
Research topic and academic works: Participated in the 863 plan development work of (200603AAZ413) Preparation of Emitting Laser Chip on Vertical External Cavity Surface of Optical Pumping 1064nm Semiconductor
Published articles
1. Mengxin Ren, Wei Wu, Wei Cai, Biao Pi, Xinzheng Zhang. Jingjun Xu*. Reconfigurable metasurfaces that enable light-polarization control by light. Light: Sci. & Appl., 6, e16254 (2017); doi: 10.1038/lsa.2016.254.
2. Wei Wu, Mengxin Ren*, Biao Pi, Wei Cai*, Jingjun Xu*. Displacement sensor based on plasmonic slot metamaterials. Appl Phys Lett, 108, 073106 (2016).
3. Wei Wu, Mengxin Ren*, Biao Pi, Wei Cai*, Yang Wu, Jingjun Xu*. Scaffold metamaterial and its application as strain sensor. Appl Phys Lett, 107, 091104 (2015).
4. Biao Pi, Yongchun Shu, Yaowang Lin, Jiaming Sun, Shengchun Qu, Jianghong Yao, Xiaodong Xing, Bo Xu , Qiang Shu, Zhanguo Wang, Jingjun Xu，Morphological and electrical properties of InP grown by solid source molecular beam epitaxy, J. Cryst. Growth, 299， 243-247(2007).
5. PI Biao, SUN Jia-ming, LIN Yao-wang, YAO Jiang-hong, XING Xiao-dong, CAI Ying,SHU Qiang, JIA Guo-zhi,LIU Ru-bin, LI Dan, WANG Zhan-guo, Unstable growth in InP homoepitaxy:Mound formation, Journal of Synthetic Crystals, Vol.36(2): 263-266 (2007).
6. Biao Pi, Yongchun Shu, Yaowang Lin, Jiaming Sun, Jianghong Yao, Xiaodong Xing, Bo Xu, Shengchun Qu, Qiang Shu, Guanjie Zhang, Zhanguo Wang, Growth mode transition InP epilayers by solid source molecular beam epitaxy,Journal of Semiconductors ,Vol.28 Supplement：45-49(2007).
7. SHU Yong-chun, PI Biao, LIN Yao-Wang,XING Xiao-dong,YAO Jiang-hong, WANG Zhan-guo, XU Jing-jun, High electron mobility of modulation doped GaAs after growing InP by solid source molecular beam epitaxy, Trans. Nonferrous Met.Soc.China (SCI),Vol.15(2), 332-335(2005).
8. Zhang Guanjie, Shu Yongchun, Pi Biao, Xing Xiaodong, Lin Yaowang, Yao Jianghong, Wang Zhanguo and Xu Jingjun, Compatibility study on growing high quality modulation doped GaAs and InP/InP epilayers by solid source molecular beam epitaxy，Journal of Synthetic Crystals(EI)，Vol.34 (3), 395-398 (2005).
